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| savantic semiconductor product specification silicon npn power transistors BUH515 d escription with to-3pml package high voltage high speed switching applications horizontal deflection for color tv and monitors. switch mode power supplies. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 8 a i cm collector current-peak 12 a i b base current (dc) 5 a i bm base current-peak 8 a p tot total power dissipation t c =25 50 w t j operating junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUH515 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 700 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 10 v v cesat collector-emitter saturation voltage i c =5a ;i b =1.25a 1.5 v v besat base-emitter saturation voltage i c =5a ;i b =1.25a 1.3 v i ces collector cut-off current v ce =1500v ; v be =0 t j =125 0.2 2 ma i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe dc current gain i c =5a ; v ce =5v 6 12 switching times t s storage time 2.7 3.9 s t f fall time i c =5a;i b1 =1.25a;i b2 =2.5a; v cc =400v 190 280 ns thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 2.5 /w savantic semiconductor product specification 3 silicon npn power transistors BUH515 package outline fig.2 outline dimensions |
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